In an N-P-N transistor application, the solid-state device is turned on when the

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Multiple Choice

In an N-P-N transistor application, the solid-state device is turned on when the

Explanation:
The device turns on when the base-emitter junction is forward biased. For a silicon NPN transistor, that means the base must be about 0.6–0.7 volt higher than the emitter. This forward bias allows a small base current to flow, which enables a much larger current to flow from collector to emitter due to current gain, turning the transistor on. If the emitter is more positive than the base or the base is negative with respect to the emitter, the base-emitter junction is not forward biased, so little to no base current flows and the transistor remains off. Merely having the collector more positive than the base does not by itself forward bias the base-emitter junction, so it won’t turn the transistor on.

The device turns on when the base-emitter junction is forward biased. For a silicon NPN transistor, that means the base must be about 0.6–0.7 volt higher than the emitter. This forward bias allows a small base current to flow, which enables a much larger current to flow from collector to emitter due to current gain, turning the transistor on. If the emitter is more positive than the base or the base is negative with respect to the emitter, the base-emitter junction is not forward biased, so little to no base current flows and the transistor remains off. Merely having the collector more positive than the base does not by itself forward bias the base-emitter junction, so it won’t turn the transistor on.

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